Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers

Abstract

From the studies on the resistive switching of NiO bilayer films consisting of different degree of crystallinity, it was observed that the initial I-V characteristics were depending on the bias polarity and the forming process was significantly asymmetric. The well-crystalline NiO film shows resistive switching whereas poorly-crystalline film does not. For the bilayer stack of those two kinds of films, the forming voltage becomes lower and has less variety when the well-crystalline side is positively-biased. This result suggests that the forming voltage and currents are controllable by modifying the film properties on the metal-oxide interfaces.