Abstract
From the studies on the resistive switching of NiO bilayer films consisting of different degree of crystallinity, it was observed that the initial I-V characteristics were depending on the bias polarity and the forming process was significantly asymmetric. The well-crystalline NiO film shows resistive switching whereas poorly-crystalline film does not. For the bilayer stack of those two kinds of films, the forming voltage becomes lower and has less variety when the well-crystalline side is positively-biased. This result suggests that the forming voltage and currents are controllable by modifying the film properties on the metal-oxide interfaces.
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