Abstract
The chalcogenides are the excellent memristor materials. Here we report the resistive switching properties of an amorphous Sb2S3 thin film. Sb2S3 films were deposited on FTO glass using a low-temperature (10°C) chemical bath deposition technique. SEM and XRD results indicate that the as-grown Sb2S3 film is dense and amorphous with uniform thickness and smooth surface. The Ag/Sb2S3/FTO memristor shows typical bipolar switching behavior with low operating voltage, high resistance ratio, long retention time, and good endurance. The electrical tests demonstrate that the switching behavior of the amorphous Sb2S3 film is based on electrochemical metallization mechanisms.
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