Abstract
The chalcogenides are the excellent memristor materials. Here we report the resistive switching properties of an amorphous Sb2S3 thin film. Sb2S3 films were deposited on FTO glass using a low-temperature (10°C) chemical bath deposition technique. SEM and XRD results indicate that the as-grown Sb2S3 film is dense and amorphous with uniform thickness and smooth surface. The Ag/Sb2S3/FTO memristor shows typical bipolar switching behavior with low operating voltage, high resistance ratio, long retention time, and good endurance. The electrical tests demonstrate that the switching behavior of the amorphous Sb2S3 film is based on electrochemical metallization mechanisms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
