Abstract
Thin film memristor behavior depends on the choice of top and bottom electrode material and metal oxide layer. In the present work, the influence of the top and bottom electrode layers on the electric field-induced resistance switching phenomena of TiO2-based MIM was studied. Au/TiO2/NiCr and NiCr/TiO2/Au structures were fabricated by depositing TiO2 active layer by reactive dc magnetron sputtering technique between thermally evaporated NiCr and Au electrodes. TiO2 layer was sputtered with a cathode power of 150[Formula: see text]W keeping the other deposition parameters constant. TiO2 films were analyzed by X-ray diffractometer, field emission scanning electron microscopy and UV–Visible spectrophotometer to investigate their structural, morphological and optical behavior. Structural studies of the films reveal that the samples were amorphous. And the [Formula: see text]–[Formula: see text] analysis for the fabricated MIM structure was analyzed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
