Abstract
This work investigates the sources of resistive switching (RS) in recently reported laser-fabricated graphene oxide memristors by means of two numerical analysis tools linked to the Time Series Statistical Analysis and the use of the Quantum Point Contact Conduction model. The application of both numerical procedures points to the existence of a filament connecting the electrodes that may be interrupted at a precise point within the conductive path, resulting in resistive switching phenomena. These results support the existing model attributing the memristance of laser-fabricated graphene oxide memristors to the modification of a conductive path stoichiometry inside the graphene oxide.
Highlights
A Time Series and Quantum Point ContactPervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain
Memristors have shown great potential in the context of neuromorphic circuits
From a more general perspective, the outstanding features of memristors make them suitable for applications that run through non-volatile memories, Internet of Things (IoT) devices, 5G, etc
Summary
Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain. Received: 17 September 2019; Accepted: 10 November 2019; Published: 13 November 2019
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
