Abstract
A sensor for high power microwave pulse measurement has been developed for X-band. A Semiconductor sample inserted between the thin metal diaphragm and wide wall of the waveguide. This sample is considered as a prototype of the sensing element (SE) of the resistive sensor (RS). The performance of SE is based on electron heating effect of the semiconductor. As the electric fields of the high-power microwave (HPM) pulse heats electrons in the sample, its resistance changes and by measuring the resistance change the power of the HPM pulse in the waveguide is determined. RS gives flat frequency response for HPM pulse measurements in 8.2–12.2 GHz frequency band. The results are simulated using Computer Simulation Technology.
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