Resistive random access memory with high selectivity and ON/OFF ratio amplification sensing

Abstract

The suppression of sneak paths in a cross-point RRAM array, one of the most challenging tasks in high density RRAM integration, has been successfully demonstrated by utilizing a Field Assisted Superlinear Threshold (FAST) selector (1, 2). The FAST selector provides a volatile switching behavior at the critical electric field. Excellent selector performance is presented, including high selectivity of > 107, sharp switching slope of 1011. Furthermore, the volatile switch based selector offers various benefits such as small operation voltage overhead in the 1S1R (1 selector 1 resistor) integration, large sensing margin and increased memory ON/OFF ratio.