Abstract
A novel resistance switching memory scheme using Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well (QW) structures grown on a Si substrate has been proposed, and write-read-erase cyclic memory operation has been demonstrated by applying pulsed input voltage sequences at room temperature. A resistance switching voltage of less than 1.0 V, a peak current density of 30–72 kA/cm2, and an ON/OFF ratio of 1.9–30 were observed. Under an appropriate bias condition, a retention time of more than 315 h and cyclic pulsed operation corresponding to write-read-erase-read for more than 4500 cycles were achieved.
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