Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite.

Wang Ke,Tongyu Liu,Xiaoting Yang

doi:10.3390/ma14216629

Abstract

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

Highlights

The transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors
We found that the CsPbBrI2 film is completely dissolved in deionized water within 3s, which exhibits a potential application in transient resistance switching memory devices with transient properties
The typical sandwich structure of the device can be seen from Figure 1a, in which the CsPbBrI2 film is used as the middle active layer, and Ag and ITO glass are respectively used as the upper and lower

Summary

Introduction

Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Resistive random-access memory is a new type of random-access memory device based on the resistance switching effect. As an intermediate active material for a new generation of resistive random-access memory, organic–inorganic halide perovskite materials show a more remarkable resistance switching effect than traditional active materials due to their simple preparation process and the unique current-voltage hysteresis property caused by rapid ion migration and defects [11,12,13,14,15,16]. The application of the organic–inorganic halide perovskite materials in the resistance switching memory devices is limited due to the hygroscopicity and relatively poor thermal stability of organic cations [17,18,19,20]. We found that the CsPbBrI2 film is completely dissolved in deionized water within 3s, which exhibits a potential application in transient resistance switching memory devices with transient properties

Preparation of CsPbBrI2 Perovskite Precursor Solution

Analysis and Characterization of Device

Results and Discussion

Conclusions