Abstract
V-doped La0.67Ca0.33MnO3 (LCMO) thin films were prepared on fluorine-doped SnO2 (FTO) conducting glass substrates with a sol-gel technique. The resistance switching properties of Au/V:LCMO/FTO heterostructures investigated by electrochemical workstation showed reproducible resistive switching behaviors at room temperature. The interactions between nonlattice (mobile) oxygen and oxygen vacancies and/or the cationic vacancies contributed to the carrier transport of the LCMO layer sandwiched systems. With proper doping concentration (3% V-doped LCMO), the resistive switching behaviors could be well improved and stabilized. The maximum resistance ratio obtained could be reached up to 700%. The experimental results show a high potential for nonvolatile memory application on amorphous substrates.
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