Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO3 Induced by Simple Annealing.

Xiaxia Liao,Junyong Kang,Jincheng Zheng,Huiqiong Wang,Jiaou Wang,Jizheng Wang,Yufeng Zhang,Jinbin Zhang

doi:10.3390/ma12223698

Abstract

The tunability of semi-conductivity in SrTiO3 single crystal substrates has been realized by a simple encapsulated annealing method under argon atmosphere. This high temperature annealing-induced property changes are characterized by the transmission spectra, scanning electron microscopy (SEM) and synchrotron-based X-ray absorption (XAS). We find the optical property is strongly influenced by the annealing time (with significant decrease of transmittance). A sub gap absorption at ~427 nm is detected which is attributed to the introduction of oxygen vacancy. Interestingly, in the SEM images, annealing-induced regularly rectangle nano-patterns are directly observed which is contributed to the conducting filaments. The XAS of O K-edge spectra shows the changes of electronic structure by annealing. Very importantly, resistance switching response is displayed in the annealed SrTiO3 single crystal. This suggests a possible simplified route to tune the conductivity of SrTiO3 and further develop novel resistance switching materials.

Highlights

Resistive random access memories (RRAMs), possessing excellent miniaturization potential, fast operation speed and strong endurance, have attracted considerable attentions in virtue of the most promising alternative to the high-density and low-cost future data storage in the non-volatile memory market and logic circuits [1,2]
High temperature annealing imposes a strong influence on the SrTiO3 single crystal
We have obtained the reduced SrTiO3 single crystal by applying a simple and electronic structure changes in the X-ray absorption spectra of O K-edge, we propose the resistance feasible annealing method

Summary

Introduction

Resistive random access memories (RRAMs), possessing excellent miniaturization potential, fast operation speed and strong endurance, have attracted considerable attentions in virtue of the most promising alternative to the high-density and low-cost future data storage in the non-volatile memory market and logic circuits [1,2]. RRAMs are based on the resistive switching (RS) effect, where the tunable resistance of materials can be reversibly controlled under an electric field. Dislocation-related conductive filaments are confirmed to be the main contributions [6,7,8,9,10,11] while Celano et al observed the non-filamentary resistive switching ( called areal switching) behavior [12]. How to deliberately create the resistive switching property is a fundamental issue in obtaining a stable resistive device

Methods

Results

Conclusion