Abstract

AbstractElectric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses. The phenomenon is widely observed in complex and binary oxides, and is the basis for development of non-volatile resistance random access memory (RRAM). A variety of analytical techniques have been employed to understand the origin of the resistance change with recent data yielding a model incorporating oxygen ion/vacancy diffusion and pile-up near the interface region of the oxide at the impervious metal interface. Further efforts are still required to fine tune the model and apply it to the optimization of RRAM device development.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.