Abstract
fluctuations and number fluctuations due to generation and recombination of free carriers. A model for generation-recombination noise in a semiconductor with localized electronic states distributed throughout the mobility gap appears consistent with both the variance of the fluctuations and the temperature dependence of the rate constants. We identify the activation energy and attempt rate as the barrier limiting thermal emission of holes from defect states to the valence band. The width of the distribution of activation energies points to inhomogeneous broadening due to band bending. Light-induced metastable changes in the material are observed to affect the variance quite significantly. The present measurements and analysis of the noise under equilibrium conditions pave the way to successfully examine nonthermal equilibrium fluctuations in the photoconductivity and under injection conditions, which is the subject of the accompanying paper in this volume. @S0163-1829~98!07031-3#
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