Resistance fluctuations in diffusive transport at high magnetic fields in narrrow Si transistors.

Abstract

We have studied the aperiodic resistance fluctuations at millikelvin temperatures in 90-nm-wide silicon metal-oxide-semiconductor field-effect transistors at high magnetic fields. In the absence of the quantum Hall effect, the correlation length of the fluctuations in magnetic field shows dips commensurate with the Shubnikov--de Haas oscillations in the resistance. These can be explained by the formation of phase-coherent electron trajectories that contain both diffusive parts in the bulk and skipping parts along the boundaries.