Abstract
In situ measurements of the resistance changes in BPSCCO bulk superconductor were carried out using 100 MeV oxygen ion irradiation at room temperature with fluence in the range 1.5*1012 to 3.5*1015 ions cm-2. The irradiation caused degradation of the zero-resistance temperature (Tc0) and increase in the room-temperature resistance (R) at fluence exceeding 3*1012 ions cm-2 up to a maximum of 3.5*1015 ions cm-2. At fluence less than 3*1012 ions cm-2, however, resistance decreased without changing Tc0, indicating improvement in the transport critical current. It is shown that the presence of grain boundaries plays a major role in these phenomena, which are due to mobile irradiation-induced defects. A possible mechanism for bringing about the observed changes is discussed.
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