Resistance and superconductivity switching caused by carrier injection: Evidences of self-trapping carriers in oxide electronics

Abstract

Carrier injection performed in doped-manganite junction exhibits stable resistance switching effect and variety of interface barrier adjusted by electric fields, which demonstrates roles of the carrier movement across interface and suggests the importance of injected carriers’ staying. All observations suggest that the staying of injected carriers in the functional oxides leads to a carrier self-trapping mechanism to understand resistance switching phenomenon. More results in other oxide junctions and epitaxial doped manganite films support carrier self-trapping model and exhibit the importance of heterointerface on stabilizing the self-trapping carriers. Superconductivity achieved and adjusted by carrier injection can be distinct evidence that the self-trapping carriers as minority played important roles in operating of oxides’ intrinsic property. This phenomenon could relate to a novel area of researches and applications in oxide electronics.