Abstract
A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a Gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 keV H+,100 keV H2+, and 150 keV Li+ ions are presented, and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.
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