Abstract
A new type of plasma asher using surface microwaves propagating on a dielectric line is reported. The ashing process is achieved in aflowing afterglow discharge. A high ashing rate of 3.2 µm/Min over a 5-inch wafer at 230°C is obtained, using pure oxygen at pressures close to 130 Pa. Radiation damage on the substrate is minimized by operating in a flowing afterglow where the ion current on the wafer is barely detectable.
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