Abstract
Microscopic Raman spectroscopy is used for the stress measurement. A 1-μm-diameter Ar laser beam is irradiated into the silicon substrate and the back-scattered light is detected by a photon multiplier. It is confirmed that the peak position of the Raman spectra shifted almost linearly with existing stress. After plane oxidation, tensile stress occured near the silicon substrate surface due mainly to the volume expansion of the newly grown oxide film
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Schedule a callMore From: JSME international journal. Ser. A, Mechanics and material engineering
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