Abstract
Residual stress in ductile thin films is shown to significantly affect the extent of film plasticity and interfacial fracture energy during debonding in thin-film structures. Specifically, the interfacial fracture resistance of a TaN/SiO 2 interface in a thin-film structure containing an adjacent ductile Cu film with varying residual stress is compared to predictions from computational models. The fracture energy of the TaN/SiO 2 interface increased by 50% for structures containing a Cu film in compression compared to similar structures with the film in tension. The effect of residual stress on interfacial adhesion is rationalized in terms of the onset of yielding within the Cu film, which affects the contribution from plastic energy dissipation to the total interface fracture energy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
