Residual strain and electrical resistivity dependence of molybdenum films on DC plasma magnetron sputtering conditions

Abstract

Sputter deposited molybdenum (Mo) thin films are used as back contact layer for Cu(In1−xGax)(Se1−ySy)2 based thin film solar cells. Desirable properties of Mo films include chemical and mechanical inertness during the deposition process, high conductivity, appropriate thermal expansion coefficient with contact layers and a low contact resistance with the absorber layer. Mo films were deposited over soda-lime glass substrates using DC-plasma magnetron sputtering technique. A 23 full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films. All the films were of submicron thickness with growth rates in the range of 34–82nm/min and either voided columnar or dense growth morphology. Atomic force microscope studies revealed very smooth surface topography with average surface roughness values of upto 17nm. X-ray diffraction studies indicated, all the films to be monocrystalline with (001) orientation and crystallite size in the range of 4.6–21nm. The films exhibited varying degrees of compressive or tensile residual stresses when produced at low or high chamber pressure. Low pressure synthesis resulted in film buckling and cracking due to poor interfacial strength as characterized by failure during the tape test. Measurement of electrical resistivity for all the films yielded a minimum value of 42μΩcm for Mo films deposited at 200W DC power.