Abstract
The electronic structure and residual resistivity of diluted (Ga, Mn)As magneticsemiconductors are calculated from first principles using the linear muffin-tin orbitalmethod, the coherent potential approximation, and the Kubo–Greenwood linear responsetheory. Particular attention is paid to the role of native compensating defects such asAs antisites and Mn interstitials as well as to different magnetic configurations of the localMn moments. The order of magnitude of the calculated resistivities compares reasonablywell with available experimental data. The concentration variations of the resistivity reflecttwo basic mechanisms, namely the strength of the impurity scattering and the number ofcarriers. In agreement with a recent experiment, the calculated resistivities are stronglycorrelated with the alloy Curie temperatures evaluated in terms of a classical HeisenbergHamiltonian.
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