Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling

Abstract

A (100) silicon wafer was implanted with 150 keV 1.6×10 15 Ge +/cm 2 to produce 175 nm amorphous silicon followed by 65 keV carbon implants ( R p =175 nm) with various doses. After regrowth at 1000°C for 15 s the dechannelling due to residual defects was studied as a function of the carbon dose by accurate RBS-channelling and the data were analysed using the DICADA code and Transmission Electron Microscopy (TEM) measurements of dislocation loop densities. The present study reveals that the presence of carbon influences not only the End-of-Range (EoR) dislocation loops formed below the original amorphous/crystalline interface but also the randomly distributed point defects. The presence of carbon in both the top amorphised and regrown layer as well as the underlying substrate causes a reduction in the point defect density of 85% for the highest carbon dose of 1×10 15 C +/cm 2.