Abstract
AbstractFor power devices the use of silicon epilayer on CZ substrate is a solution to make devices with a low oxygen concentration in the active zone. Oxygen is probably one of the most important residual impurities in silicon samples. Usualy the determination of the interstitial oxygen is done by Fourier Transform Infra Red spectroscopy (FTIR). In this work we have determined oxygen by Charged Particle Activation Analysis (CPAA). The main difference between these two techniques is that CPAA gives the total oxygen concentration whereas FTIR gives interstitial oxygen.We have determined the oxygen in 200μm thick silicon epilayer and studied its behavior during thermal treatments. Oxygen concentration is found in the range of 1015/cm3 just after the epitaxial process. After thermal treatment the concentration in the epilayer rose to several 1016/cm3 to 1017/cm3, depending on the treatment. A comparison with FTIR experiment is done and the amount of oxygen precipitate is determined.
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