Residual optical absorption from native defects in CdSiP2 crystals

Abstract

CdSiP2 crystals are used in optical parametric oscillators to produce tunable output in the mid-infrared. As expected, the performance of the OPOs is adversely affected by residual optical absorption from native defects that are unintentionally present in the crystals. Electron paramagnetic resonance (EPR) identifies these native defects. Singly ionized silicon vacancies (VSi−) are responsible for broad optical absorption bands peaking near 800, 1033, and 1907 nm. A fourth absorption band, peaking near 630 nm, does not involve silicon vacancies. Exposure to 1064 nm light when the temperature of the CdSiP2 crystal is near 80 K converts VSi− acceptors to their neutral and doubly ionized charge states (VSi0 and VSi2−, respectively) and greatly reduces the intensities of the three absorption bands. Subsequent warming to room temperature restores the singly ionized charge state of the silicon vacancies and brings back the absorption bands. Transitions responsible for the absorption bands are identified, and a mechanism that allows 1064 nm light to remove the singly ionized charge state of the silicon vacancies is proposed.