Abstract
High resolution synchrotron X-radiation diffraction images of low thermal gradient, low pressure, liquid encapsulated Czochralski (LEC) silicon-doped gallium arsenide display a degree of crystalline order that is far higher than that found in undoped conventional LEC material. No distinct volume irregularity is observed in one crystal where it is unstrained. Only a set of surface-treatment-related dislocations is prominent in a second. A third crystal exhibits two distinct sets of quasi periodic dislocations, which have been analyzed in detail. The results support a model previously proposed for the evolution of disorder in gallium arsenide and suggest the role that silicon plays in its control.
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