Abstract
An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.
Highlights
Phase change materials (PCMs) are one of the most promising materials for applications in non-volatile data memories
Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
Beside many methods,[7,8,9,10] the epitaxial deposition of layered chalcogenides is to date mainly done by molecular beam epitaxy (MBE).[11,12]
Summary
Phase change materials (PCMs) are one of the most promising materials for applications in non-volatile data memories. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
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