Abstract
In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.
Highlights
Zirconium Nitride (ZrN), Ti, and TiN on top of the pure boron (PureB) layers deposited at 500 ◦C and 700 ◦C for low energy electron detector applications
Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others
The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements
Summary
ZrN, Ti, and TiN on top of the PureB layers deposited at 500 ◦C and 700 ◦C for low energy electron detector applications. A thicker layer of PureB (10 min deposition at 700 ◦C) can act as a diffusion barrier between Al and the silicon substrate and results in a defect free entrance window.[17] for detection of low energy radiation, the boron layer should be as thin as possible.
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