Abstract
<p indent=0mm>In order to meet the needs of the development of long wave HgCdTe infrared focal plane devices, this paper summarizes the related research progress from two aspects: the p-type doping mechanism of materials and the low-frequency noise of devices. It includes: (1) the classical p-type activation model of as doping is modified theoretically, and a new activation model is proposed, that is, as migration dominated by composite defect Te<sub>Hg</sub>-V<sub>Hg</sub> leads to the formation of AsTe<sub>2</sub> complex, which shows p-type. (2) It is theoretically explained that the fast diffusion characteristics of Au doped HgCdTe are caused by the interstitial diffusion mechanism; a method is proposed to control the spatial distribution of Au impurities through the interaction between Au impurities and Hg vacancies, which can realize controllable p-type doping and is verified by experiments. (3) A high sensitivity and low frequency noise test system is built. Combined with the numerical calculation model, the evaluation method of low-frequency noise is established. At the same time, the origin of low-frequency noise of long wave HgCdTe device is analyzed.
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