Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Abstract

Radiation damage in electronic devices is one of the key factors determining the survival probability of on-orbit spacecraft. Thus, it has remained an important topic in the field of radiation-hardening technology. High reliability, high integration, high performance, low power consumption, and low cost are the important requirements for the development of next-generation electronic systems. For space electronic systems, the use of radiation-hardened high-performance nano-devices will continue to be an important trend. Based on thorough reviewing of the research status at home and abroad, this paper analyzes new problems faced by nano-devices due to radiation. Nano-device technology is different from that for macroscopic devices. For example, the channel length in nano-devices is reduced to ten nanometers, and the equivalent thickness of their gate oxide is less than one nanometer. In order to reduce the gate-induced drain leakage effect, either vertical inverse doping or transverse halo ring doping is applied to the process. To reduce power consumption, multiple semiconductor materials, such as strained silicon, GeSi, high k gate dielectric, metal gate, etc., have been introduced. To enhance control over the gate, the structure incorporates 3D FinFETs. This process approaches the physical limit, and the adoption of new materials and structures have created new radiation effects and mechanisms. Thus, the experimental techniques become more complex, which brings new challenges to research on radiation-hardening technology. This paper analyzes the present status of domestic and foreign research into radiation effects in nano-devices. Key scientific issues and technologies will be presented, which are needed to study radiation effects and simulation experiments of nano-devices with a feature size of less than 28 nm. Research on photon and heavy ion radiation mechanisms, as well as experimental techniques in nano-devices, should continue receiving focus. In addition, radiation damage mechanisms in nanometer devices should be studied. Heavy-ion micro-beam simulations for the distribution of nano-devices and circuit sensitive areas should be established in order to analyze weak links. A new nano-device and circuit radiation-resistant design method should be proposed. The current survey provides a reference for anti-radiation reinforcement and applications of nano-devices in space.