Abstract
With the development of the Internet of things, artificial intelligence, and wearable devices, massive amounts of data are generated and need to be processed. High standards are required to store and analyze this information. In the face of the explosive growth of information, the memory used in data storage and processing faces great challenges. Among many types of memories, memristors have received extensive attentions due to their low energy consumption, strong tolerance, simple structure, and strong miniaturization. However, they still face many problems, especially in the application of artificial bionic synapses, which call for higher requirements in the mechanical properties of the device. The progress of integrated circuit and micro-processing manufacturing technology has greatly promoted development of the flexible memristor. The use of a flexible memristor to simulate nerve synapses will provide new methods for neural network computing and bionic sensing systems. In this paper, the materials and structure of the flexible memristor are summarized and discussed, and the latest configuration and new materials are described. In addition, this paper will focus on its application in artificial bionic synapses and discuss the challenges and development direction of flexible memristors from this perspective.
Highlights
According to circuit theory, any two of the circuit variables voltage (v), charge (q), current (i), and magnetic flux (Φ) have a certain relationship, that is, voltage/current = resistance, charge/voltage = capacitance, magnetic flux/current = inductance, but there is no circuit element associating charge with magnetic flux
Based on the principle of complete circuit combination and physical symmetry, he believed that in addition to resistance, capacitance, and inductance, there should be an element that represents the relationship between electric charge and magnetic flux, and he named the circuit element “memristor” [2,3]
Researchers in various fields have continued to invest in it, and memristors made of various new materials, such as inorganic materials and two-dimensional materials, and innovative structures have been continuously studied, and their working mechanisms have been continuously explored
Summary
Paul et al [40] dopped Al in HfOx as a dielectric layer and fabricated a flexible Al/Al-doped HfOx/ITO/PET resistive memory device, and it showed excellent switching performance, such as resistance ratio (>103) and retention (104 s). Kumar et al [44] used Al2O3 buffer layers on both sides of the ZnO, which help stabilize the local oxygen migration of conductive filament formation and rupture during continuous switching cycles, and studied a bipolar resistive switch memristor with TiN/Al2O3/ZnO/Al2O3/TiN structure and flexible, non-volatile memory applications. It showed uniform and very stable bipolar resistance switching characteristics. Fang et al [45] inserted MgO as an intermediate layer between MoO3 layers to improve device performance and prepared a high-performance, biodegradable, transient, resistance random access memory with a Mg/MoO3/MgO/MoO3/Mg structure on a polylactic acid substrate
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