Abstract
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future.
Highlights
With the development of integrated circuits, the characteristic size of devices is decreasing
This paper focuses on the total ionizing dose (TID) effect in SOI-tunneling field effect transistor (TFET)
In order to study the influence of the TID effect on the performance parameters of the device, this section adopts the method of adding a fixed charge for simulation analysis
Summary
With the development of integrated circuits, the characteristic size of devices is decreasing. TFET has become one of the potential new devices in the field of low voltage. There are few studies on the Micromachines 2021, 12, x FOR PEER REVIEW mi12101232 radiation resistance of TFET devices [6,7,8,9]. Field parameter in V/cm, and E0, E1 and m are constants with sizes of 0.1 V/cm, 1.35 × 106 It is found the current switch ratio and subthreshold swing of the device deteriorates. Device Model bipolar effect of TFET will be repressed to some degree by radiation, the greater. The device model built in Sentaurus (computer-aided simulation software) is shown the negative voltage of gate, the less the inhibition of radiation on bipolar effect. Unit nm https://www.mdpi.com/journal/micromachines nm nm Micromachines 2021, 12, 1232
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