Abstract
The multi-junction bonding GaInP/GaAs/InGaAsP solar cell was developed. Bonding technology can reduce dislocations and defects produced in the epitaxial growth process of the lattice mismatch materials, and the defects are restricted within dozens of nanometer layers at the interface without spreading into the inner layers. Bonding solar cell is one of the efficient developing trends in the future. The solar cell interface uses p+ GaAs/n+ InP tunneling junction, and the open circuit voltage is greater than 3.0V. The efficiency is 24% when the structural parameter is not optimized and the anti-reflective film is not prepared. Open circuit voltage shows that the two solar sub cells are connected in series. Results are analyzed and the improvement measures are given. This bonding technology provides a new way for monolithic integration high efficient multi-junction cells.
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