Abstract
Aiming at the problems such as metal ionic contamination, poor dispersion property and low material removal rate (MRR) in the chemical mechanical polishing (CMP) process for sapphire crystal, a proper CMP slurry based on the organic basis was studied in this paper. Through the single-factor experiment, the effect of different abrasives, pH regulators, dispersants and active agents on the surface roughness and material removal rate (MRR) were studied and a fine CMP slurry was developed. The polishing performance of developed CMP slurry was also researched by comparing the MRR and the surface roughness of sapphire crystal with that polished using the KA-901 CMP slurry. The results show that the MRR and the surface roughness corresponding to the developed slurry were all better than KA-901 slurry, and the developed CMP slurry has a good application prospect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
