Abstract

In view of the influence of MOSFET parasitic parameters on the LLC resonant circuit performance, the equivalent analysis of MOSFET parasitic capacitance is carried out first. Based on the equivalent model, the theoretical analysis of the influence of parasitic parameters on the LLC resonant transformation circuit at all stages is analyzed. Then, the nonlinear characteristics caused by parasitic parameters are modeled based on the Angelov model, and the influence of this model on the DC circuit is analyzed. Finally, LLC resonant circuit model is established in MATLAB, and the influence of parasitic parameters is considered in the simulation model. The simulation results show that the equivalent model can better reflect the characteristics of MOSFET devices. At the same time, because of parasitic parameters, the output gain and resonant frequency of LLC resonant circuit are affected, especially the resonant frequency.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.