Abstract
The development of semiconductor materials and devices will lead to a new industrial technology revolution, in which the Silicon Carbide (SiC) substrate material has very excellent performance and it is especially suitable for manufacturing wave length lasers, white light emitting tubes, high-frequency, high-temperature and high-power devices, etc. This paper focuses on solving the key problems for producing large size and low defects of SiC crystals by the PVT method, such as the preparation and purification of the high purity raw material, the simulation of the temperature field, the control of the crystal defects and the growth of the large size SiC crystals.It is critical for the development of SiC industry.
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