Abstract
The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT). At present, only the transient thermal resistance curve in the datasheet and the initial thermal model of the experimental test are used to evaluate the life of the IGBT module, while it is well known that IGBT parameters are affected by its degree of aging. Thus, the development of research for the aging process of IGBT is of key importance. The aging process of IGBT is proposed to be a gradual aging process, verified by the accelerated aging experiment. Firstly, the mechanism between the relevant aging parameters and the degree of IGBT aging is studied in this paper. Secondly, the switching parameters in different degrees of aging are measured and compared by accelerated experiments. Finally, the stepwise linear regression algorithm is used to screen parameters and the Mann-Kendall test method is used to analyze the IGBT aging process curve. The results show that the aging process of IGBT is gradual, and the aging process model of IGBT is finally established. On this basis, the remaining using life of IGBT can be accurately measured.
Highlights
Insulated Gate Bipolar Transistor (IGBT), a power electronic device, is widely used in electric vehicles, new energy generation, and rail transit
The aging of IGBT is mainly caused by the aging of the gate oxide layer, which includes time-dependent dielectric breakdown (TDDB) and hot-carrier injection (CHI)
The above four pictures show that the parameters screened by stepwise regression algorithm are related to the degree of aging of IGBT and can be used for the analysis of the degree of aging
Summary
Insulated Gate Bipolar Transistor (IGBT), a power electronic device, is widely used in electric vehicles, new energy generation, and rail transit. The aging of IGBT is mainly caused by the aging of the gate oxide layer, which includes time-dependent dielectric breakdown (TDDB) and hot-carrier injection (CHI). Even at low voltages, a strong electric field can be generated, which can lead to the emergence of hot carriers These hot carriers have enough energy to be ejected into the gate oxide layer, resulting in charge traps and interfacial states. The latter will change the external characteristics of IGBT (such as threshold voltage, transconductance, and leakage current, etc.), and eventually, causing device failure with the increase of damage degree [30]. This paper studies its correlation according to the relationship between the measured aging-parameters and the degree of aging
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