Abstract
Due to the characteristics of hard brittleness and strengthening inertia, the high-efficiency and ultra-precision machining of the third generation semiconductor materials has become an urgent problem, with low processing efficiency and poor surface quality. The aggregate fixed-abrasive (FA) lapping pad was used to lap polycrystalline aluminum nitride (AlN) substrates, which provided practical experience for efficient precision machining of hard and brittle semiconductor substrates. The results indicated that: the effect of aggregate particle initial size and applied load on MRR and Ra during rough lapping and fine lapping were most significant. In the rough and fine lapping stage, W5-7 and W3-5 Al-Si binder aggregate diamond lapping pads were adopted, respectively, with an applied load of 2.0 psi. The optimized process can reduce the Ra value of the AlN blank to <70 nm within 1 h.
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