Research on the emitter thickness optimization of GaInP/GaAs/Ge triple-junction solar cell under space proton irradiation based on TCAD simulation

Junwei Li,Yuanyuan Xue,Chengying Shi,Jintao Wang,Zujun Wang

doi:10.1063/5.0029312

Junwei Li, Yuanyuan Xue + Show 3 more

Open Access

https://doi.org/10.1063/5.0029312

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Abstract

The degradation of GaInP/GaAs/Ge triple-junction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is studied using numerical simulation. The degradation results of triple-junction solar cells with different GaAs emitter thickness have been investigated. The degradation mechanism induced by proton irradiation is analyzed. The results show that the short-circuit current and maximum power increase first and then decrease with the increase in GaAs sub-cell emitter thickness. The degradation of the GaAs sub-cell external quantum efficiency is greater than that of the GaInP sub-cell induced by proton irradiation. Meanwhile, the remaining external quantum efficiency of the GaAs sub-cell first increases and then decreases with the increase in emitter thickness after proton irradiation.

Highlights

GaInP/GaAs/Ge triple-junction solar cells have been widely used as the power source in space applications because of their high conversion and stable structures.1–4 when the triplejunction solar cells are exposed to proton irradiation in space environments, they will be damaged by the radiation, which leads to output performance degradation or even functional failure
There is a great deal of research on the performance of the GaInP/GaAs/Ge triple-junction solar cells induced by proton irradiation
When the triple-junction solar cells are illuminated by light, the electron–hole pairs generate where the photon energy is greater than the bandgap where RA and RD are the acceptor-like trap and donor-like trap recombination rates, and m and n are the number of acceptorlike traps and donor-like traps, respectively

Summary

INTRODUCTION

GaInP/GaAs/Ge triple-junction solar cells have been widely used as the power source in space applications because of their high conversion and stable structures. when the triplejunction solar cells are exposed to proton irradiation in space environments, they will be damaged by the radiation, which leads to output performance degradation or even functional failure. According to the optimization studies on triple-junction solar cells, the related electrical parameters are affected by different GaAs sub-cell emitter thickness. The detailed degradation of triple-junction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is not clear. Few studies have been conducted on the degradation of triplejunction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation. The degradation of GaInP/GaAs/Ge triplejunction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is investigated. The electrical and optical parameter degradation of triple-junction solar cells with different GaAs sub-cell emitter thickness is obtained. The research goal is to optimize the emitter thickness of the GaAs sub-cell and reduce the degradation of GaInP/GaAs/Ge triplejunction solar cells induced by proton irradiation. The research will provide an approach to improve the triple-junction solar cell radiation resistance in space proton irradiation

MODELING PROCESS

Degradation of electrical parameter performance

Analysis of external quantum efficiency

CONCLUSIONS AND DISCUSSION