Abstract
As a new type of semiconductor material with good electrical and mechanical properties, graphene has broad applications. The important factor affecting the performance of graphene devices is the contact resistance of graphene and metal, which is much higher than traditional semiconductor contact resistance. Based on MOSFET structure, the graphenemetal contact resistance is analyzed by Laudauer formula, where the graphene-metal atomic distance is simulated by the density functional theory. The simulation results show that the graphene-metal contact has two kinds of characteristics which are chemical absorption such as graphene-Pd and physical absorption such as graphene-Pt. The contact resistivities of graphene-Pd and graphene-Pt calculated by the presented analytical and simulation method are consistent with the experimental results.
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