Abstract
The critical temperatures of semiconductor laser facet coating layers were studied via measurements from three prongs on the surface (coating exterior boundary), on the facet (coating interior boundary) and along the inner cavity, with temperatures measured via infrared imaging, thermoreflectance and forward-voltage methods, respectively. We subdivided the facet microstructure temperatures and demonstrated the feasibility of facet temperature measurement via thermoreflectance for the reflected light carrying the temperature information mainly comes from the coating interior boundary. Facet reflectivity transients of an AlGaInAs/AlGaAs laser diode are traced using an optical setup featuring fiber transmission and fiber detection. The highest temperature along the z-axis was measured at the facet, with a temperature rise exceeding two times that at the surface, which confirmed the significance of the subdivision, and approaching four times that in the inner cavity. Thermal transient analysis from optical and electrical methods presents similar results; steady temperature measurements as a function of injection current indicate light absorption’s contribution to facet heating.
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