Abstract
In this paper, the NbO x , which was regarded as a promising material based on its insulator–metal transition (IMT) effects, was applied as the switching layer of the device. The threshold switching characteristics were comprehensively investigated with particular emphasis on temperature dependence. The conduction mechanism for high-resistance state (HRS) was fitted and verified to be Schottky emission. With the increase in temperature, the fitting results demonstrated that the Schottky barrier decreased, leading to a reduction in the resistance of HRS. Furthermore, according to Fourier’s law of heat conduction, the fluctuation range of temperature was smaller, causing a narrow distribution of the threshold voltage as the operating temperature increased. In addition, the increasing temperature caused high energy of electrons, which would induce an IMT more easily, leading to a lower threshold voltage. This paper provided the promise for improving the thermal stability of selected devices.
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