Research on subsurface deformed layer in ultra-precision cutting of single crystal copper by focused ion beam etching method

Abstract

In this paper, the focused ion beam was used to study the subsurface deformed layer of single crystal copper caused by the nanoscale single-point diamond fly cutting, and the possibility of using nanometer ultra-precision cutting to remove the larger deformation layer caused by traditional rough cutting process was explored. The maximum cutting thickness of single-point diamond cutting was about 146 nm, and the surface of the single-crystal copper after cutting was etched and observed by using the focused ion beam method. It was found that the morphology of the near-surface layer and the intermediate layer of the copper material were larger differences: the near-surface of the material was smaller and more compact, and the intermediate material layer of the material was more coarse sparse. The results showed that the traditional precision cutting would residual significant subsurface deformed layer and the thickness was on micron level. Even more, the subsurface deformed layer was obviously removed from about 12μm to 5μm after single-point diamond fly cutting in this paper. This paper proved that the large-scale subsurface deformed layer caused by traditional cutting process could be removed by nanometer ultra-precision cutting. It was of great significance to further establish the method that control of the deformation of weak rigid components by reducing the depth of the subsurface deformed layers.