Abstract
In radiation hardened SRAMs and flip-flops, DICE (Dual Interlocked Cell) design is commonly used. DICE is supposed not to flip under normally incident heavy ion beams. But tests show a non-zero SEU cross-section of SICE SRAM. The paper presents a quantitative analysis of the phenomenon. Elastic collision between the incident particle and the silicon atom in the device is considered to be responsible for the SEU in DICE. The simulated results match the experimental results very well. Energy dependency of SEU cross-section is analyzed.
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