Abstract
Complementary metal oxide semiconductor (CMOS) devices are an important part of integrated circuit (IC), but in the application process, it has many reliability problems, such as negative-bias temperature instability (NBTI), electromigration (EM), time-dependent gate oxide breakdown (TDDB), hot carrier injection (HCI), etc. These reliability problems can affect the threshold voltage and mobility of the device. In order to improve the reliability of integrated circuits, these reliability problems are systematically studied in this paper.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
