Abstract
To decrease the effect of carrier concentration on the skin depth, a new SPiN diode based on superlattice structure is discussed. Compared with traditional plasma diode, the intrinsic region of the SPiN diode is designed with SiGe/Si superlattices layer, and the thickness of the plasma islands is reduced from 80 μm to 5 μm, which dramatically reduced the design complexity and technical difficulty of microwave devices. Besides, a high-integration solid-state plasma inverted-F antenna based on this diode is also demonstrated in this paper. The resonant frequency of the inverted-F plasma antenna is in the order of 2.45 GHz, and the maximum gain reaches to 2 dB, which verify the effectiveness of the designed superlattice SPiN diode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
