Abstract
In this paper, we take advantage of the high sensitivity of two-dimensional electron gas concentration in the heterojunction channel of a GaN high electron mobility transistor (HEMT) to device surface states and gate voltages. By integrating a HEMT with ferroelectric materials with photovoltaic effects, a photo-sensitive gate HEMT photodetector based on ferroelectric integration is obtained. By exploring the ferroelectric and composite film sputtering growth epitaxial atmosphere, a high-performance PZT/ZnO composite ferroelectric film grown in an oxygen-containing atmosphere is obtained. Comparing the PZT and LiNbO3 (LN) ferroelectric thin films prepared with or without the buffer layer, the following conclusions are obtained. The quantum efficiency of the PZT/ZnO film increases by 240% and 596% at the peak of 300–400 nm, reaching 14.55%; the residual polarization of the PZT film obtained in an oxygen-containing atmosphere reaches 52.31 μC/cm2; the PZT/ZnO composite film has better fatigue characteristics. The GaN HEMT detector prepared by using magnetron sputtered PZT/ZnO as the sensing gate under the oxygen atmosphere has a photocurrent increment of 11.51 mA under ultraviolet light and a responsivity of 111A/W at 365 nm. At the same time, the device has τr = 0.12 s and τf = 8.3 s transient response. The research in this paper shows that a new structure photodetector based on a GaN HEMT has excellent ultraviolet light response, which provides a new research direction for the light detection mechanism.
Highlights
With the wide application of ultraviolet photodetectors (UV PDs) in industrial production, environmental monitoring, and military ballistic guide prediction,1,2 UV PDs have become a research hotspot in the field of photodetectors
The excellent ferroelectricity and photovoltaic effect of the ferroelectric materials enable the ferroelectric materials to have the photoelectric conversion efficiency (PCE) under the different structures shown in Fig. 1.11–18 by integrating the ferroelectric thin film with the GaN high electron mobility transistor (HEMT), the change in the ferroelectric polarization and polarization field distribution caused by the bias voltage and the photo-generated voltage generated by the ferroelectric thin film under illumination acts on the channel through the gate, which can achieve the 2-DEG concentration regulation
We propose a new GaN HEMT UV PD based on a photosensitive gate
Summary
With the wide application of ultraviolet photodetectors (UV PDs) in industrial production, environmental monitoring, and military ballistic guide prediction, UV PDs have become a research hotspot in the field of photodetectors. The excellent ferroelectricity and photovoltaic effect of the ferroelectric materials enable the ferroelectric materials to have the photoelectric conversion efficiency (PCE) under the different structures shown in Fig. 1.11–18 by integrating the ferroelectric thin film with the GaN HEMT, the change in the ferroelectric polarization and polarization field distribution caused by the bias voltage and the photo-generated voltage generated by the ferroelectric thin film under illumination acts on the channel through the gate, which can achieve the 2-DEG concentration regulation.19 Based on these factors, we propose a new GaN HEMT UV PD based on a photosensitive gate. In order to increase the photovoltaic performance of the photosensitive gate, ZnO with a wide bandgap and large exciton binding energy is used as a buffer layer between PZT and HEMT, that is, to reduce the lattice mismatch between the GaN and PZT interface and inhibit the diffusion between PZT and GaN; in addition, the interface coupling effect caused by the ZnO layer can effectively improve the photoelectric properties of the film and generate a larger photovoltaic voltage.
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