Abstract
In recent years, developing new structure and technology has always been an important link in the production and manufacture on photovoltaic cells. Among all high-efficiency crystalline silicon solar cells, the tunnel oxide passivated contact (TOPCon) solar cell has attracted much attention due to its excellent passivation and compatibility with the traditional crystalline silicon solar cells. This article first introduces the basic structure and process route of the tunneling oxide passivation contact (TOPCon) solar cell. Then the annealing process was studied. Experiments on the effects of different annealing temperatures and times on the doping characteristics were carried out, and the experimental results were analyzed. The experimental results show that the annealing temperature and time have a very important effect on the annealing effect of ion implanted silicon. Finally, the light injection annealing process is researched and experimented. Experimental results show that the efficiency of the light injection annealing method is significantly improved, which is mainly manifested in the improvement of Voc (open circuit voltage) and FF (fill factor).
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