Abstract
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne ions (D = 1.5 × 10 cm−2, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of Ta = 373 K has been presented, concerning the in uence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have con rmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
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