Research on Magnetic Property of Environmental Friendly Material SnO2: Mn, S

Su Lei,Huang Yi,R Weerasinghe,C Fang

doi:10.1051/e3sconf/202123701023

Abstract

Tin dioxide (SnO2) is a commonly known material with the rutile structure of wide band gap ntype semiconductor which is widely used like ZnO common oxide materials in daily life. But comparing with ZnO, it has a wider band gap (about 3.6 eV), and a higher exciton binding energy 130 meV. Because of its excellent optical, electrical and other excellent physical and chemical characteristics, SnO2has been widely adapted in thermoelectric film, gas sensor, photovoltaic devices, magnetic materials, and other related fields. A large number of theories and experiments illustrate that, after the proper doping, the remarkable improvements can be achieved. Based on the first principle, we investigated the photoelectric properties and magnetic properties when the Mn and S were doped in SnO2. It was shown by calculation that a Mn atom provides 1.52 μB magnetic moment and a S atom provides 0.06 μB, while O and Sn atoms rarely contribute to the system. In the system the magnetism is mainly derived from the Mn-3d electronic spin polarization.

Highlights

As an environmental friendly material, SnO2 has a rutile structure and is an n-type wide bandgap semiconductor with a band gap of 3.6 eV
Due to the successful preparation of TiO2 diluted magnetic semiconductor [1], people began to broaden their horizons to other oxide semiconductor materials, such as tin dioxide we are going to talk about here
It can be seen that the film The cobalt magnetic moment of the sample is much larger than that of cobalt and cobalt clusters and that of cobalt in other cobalt oxides, but there is a little regret that its magnetization will rapidly weaken as the Co concentration increases

Summary

Introduction

As an environmental friendly material, SnO2 has a rutile structure and is an n-type wide bandgap semiconductor with a band gap of 3.6 eV. People began to study SnO2 dilute magnetic semiconductors both experimentally and theoretically Dietl and his collaborators used pulsed laser deposition (PLD) technology to grow Co-doped SnO2 thin film samples [24]. They found that when the Co doping concentration is less than 3%, the sample film will show ferromagnetism and be highly transparent. Fukumura et al successfully prepared iron-doped SnO2 semiconductor materials by pulsed laser deposition technology, and the prepared samples showed ferromagnetic and highly transparent characteristics [5] Fitzgerald and his collaborators took the work one step further and found room temperature ferromagnetism in Sn1-xMxO2 (M= Mn, Fe, Co, x=0.05) semiconductor materials [6]. As there is no report about the co-doping of Mn and S with SnO2, this article will explore the co-doping of Mn and S with SnO2

Calculation method and model

Magnetic properties

Complex refractive index

Conclusion