Abstract

In this paper, a laser interference lithography technology which based on the mutual injection dual-output laser is innovatively developed. The experimental study of two beams of laser interference lithography on the material surface is carried out by using two beams of phase locking and the same frequency output. In order to solve the problems caused by beam splitter in laser interference lithography in the past, such as unequal energy, high loss and unsatisfactory interference pattern. U cavity structure is constructed by using two pump gain dielectric devices and two perpendicular 45° total reflection mirrors in the experiment. Outputing two parallel beams with pulse width of 8.2 ns and energy of 186 mJ after intracavity electro-optic Q-switching. Then using two other reflection mirrors to make the two beams of light reflection convergence onto the surface of the silicon material for interference lithography. When the angles of two beams are 12°, 9°and 6°, the clear interference fringes with periods of 5.1 μm, 6.9 μm and 10.4 μm are obtained. The interference photolithography using a dual-output laser with mutual injection has a positive significance for micromachining technology, and it can be extended to multi-channel laser interferometry processing using multi-channel mutual injection lasers.

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